| NCE0115K場效應(yīng)管TO-252內(nèi)阻失真度跨導(dǎo)陽極電流 |
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價格：0.7000 元(人民幣) | 產(chǎn)地：廣東省深圳市 |
| 最少起訂量：1 | 發(fā)貨地：廣東省深圳市 | |
| 上架時間：2024-12-30 07:27:49 | 瀏覽量：4 | |
深圳市華鉆電子有限公司
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| 經(jīng)營模式：貿(mào)易公司 | 公司類型：私營獨資企業(yè) | |
| 所屬行業(yè)：集成電路/IC | 主要客戶：LED照明 電源 | |
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| 聯(lián)系人:劉志華 (先生) | 手機:13823541744 |
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| 郵箱:2355827366@qq.com | 地址:龍華新區(qū)民治街道龍岸花園20棟B |
NCE N-Channel Enhancement Mode Power MOSFET ---NCE0115K
NCE0115K? NCE2060K? NCE2302? NCE3010S? NCE30P12S? ?NCE3050K? NCE3080IA? NCE3095K NCE3400? NCE3416? NCE4060K? NCE4080K? NCE6003? NCE6005AR? NCE6075K? NCE6080K? NCE65T180F NCE65T360? NCE70T540F等新潔能NCE一級代理,全新原裝現(xiàn)貨,可售樣,可提供技術(shù)支持
LED驅(qū)動IC及配套MOS: 13418531057 (微信同號)胡藍丹
Description The NCE0115K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =15A RDS(ON) < 100m? @ VGS=10V (Typ:80m?) RDS(ON) < 110m? @ VGS=4.5V (Typ:85m?) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits 100 UIS TESTED! 100 ?Vds TESTED!
Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE0115K NCE0115K TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 15 A Drain Current-Continuous(TC=100℃) ID (100℃) 10.6 A Pulsed Drain Current IDM 60 A Maximum Power Dissipation PD 50 W Single pulse avalanche energy (Note 5) EAS 200 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 3 ℃/W
Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.0 1.6 2.5 V VGS=10V, ID=10A - 80 100 Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=10A - 85 110 m? Forward Transconductance gFS VDS=5V,ID=10A - 10 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 830 - PF Output Capacitance Coss - 44.2 - PF Reverse Transfer Capacitance Crss VDS=50V,VGS=0V, F=1.0MHz - 30.1 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 15 - nS Turn-on Rise Time tr - 5 - nS Turn-Off Delay Time td(off) - 25 - nS Turn-Off Fall Time tf VDD=50V, RL=6.4? VGS=10V,RG=3? - 7 - nS Total Gate Charge Qg - 22.3 nC Gate-Source Charge Qgs - 2.87 - nC Gate-Drain Charge Qgd VDS=50V,ID=10A, VGS=10V - 6.14 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=15A - - 1.2 V Diode Forward Current (Note 2) IS - - 15 A ? |
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